JPH0325947B2 - - Google Patents

Info

Publication number
JPH0325947B2
JPH0325947B2 JP56171803A JP17180381A JPH0325947B2 JP H0325947 B2 JPH0325947 B2 JP H0325947B2 JP 56171803 A JP56171803 A JP 56171803A JP 17180381 A JP17180381 A JP 17180381A JP H0325947 B2 JPH0325947 B2 JP H0325947B2
Authority
JP
Japan
Prior art keywords
gate electrode
transistor
region
layer
flip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56171803A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5873151A (ja
Inventor
Masao Taguchi
Tooru Shinoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56171803A priority Critical patent/JPS5873151A/ja
Publication of JPS5873151A publication Critical patent/JPS5873151A/ja
Publication of JPH0325947B2 publication Critical patent/JPH0325947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP56171803A 1981-10-27 1981-10-27 半導体記憶装置 Granted JPS5873151A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56171803A JPS5873151A (ja) 1981-10-27 1981-10-27 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56171803A JPS5873151A (ja) 1981-10-27 1981-10-27 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5873151A JPS5873151A (ja) 1983-05-02
JPH0325947B2 true JPH0325947B2 (en]) 1991-04-09

Family

ID=15930001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56171803A Granted JPS5873151A (ja) 1981-10-27 1981-10-27 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5873151A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217356A (ja) * 1983-05-25 1984-12-07 Nec Corp 半導体記憶装置
JPS607172A (ja) * 1983-06-24 1985-01-14 Mitsubishi Electric Corp 半導体メモリセル

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125780A (en) * 1977-04-08 1978-11-02 Cho Lsi Gijutsu Kenkyu Kumiai High ic mos circuit
US4158239A (en) * 1977-12-20 1979-06-12 International Business Machines Corporation Resistive gate FET flip-flop storage cell

Also Published As

Publication number Publication date
JPS5873151A (ja) 1983-05-02

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